MOSFET Models for VLSI Circuit Simulation

The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.

שנה

1993

שפה

English

סדרה

Computational Microelectronics

הוצאה

Springer Vienna

מהדורות

1

עמודים

605

ISBN

9783709192498

מקור הנתונים: Wikidata