Hierarchical Device Simulation
Christoph Jungemann · 2003
Where to buy
Check today’s price on Amazon. We do not show prices because they change daily.
View on AmazonAffiliate link. As an Amazon Associate we earn from qualifying purchases.
About the book
This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.
Book details
- Year
- 2003
- Language
- English
- Series
- Computational Microelectronics
- Publisher
- Springer Vienna
- Editions
- 1
- Pages
- 254
- ISBN
- 9783709172261
Data source: Wikidata